Silicon Wafer With Epitaxial Layer

FZ Silicon wafer  Growth method Float Zone,mostly is light dopant or undopant with high resistivity .The resistivity mostly ＞1000 Ohm.cm. However, in some cases, doping of zone melting silicon rods can also be achieved through NTD illumination and GD gas doping to achieve better uniformity and lower resistivity. If you need any spec of silicon substrate you can contact us .

Czochralski monocrystalline silicon wafer Growth method:CZ  The main process is to put polycrystalline silicon into the crucible, heat it to melt it, then clamp a single crystal silicon seed crystal and suspend it above the crucible. When pulling straight, insert one end into the melt until it melts, then slowly rotate and Pull upward. In this way, a single crystal will be formed through gradual condensation at the interface between liquid and solid. Since the entire process can be regarded as a process of replicating the seed crystal, the generated silicon crystal is single crystal silicon. The Czochralski method has a relatively high carbon and oxygen content and many impurities and defects, but the cost is low. Usually Cz silicon wafer dopant phosphorus,Boron,Sb,As .

According to process methods, it can be divided into CZ Si single crystal, FZ Si single crystal, and MCZ Si single crystal. Zone melting silicon single crystal is mainly used for making power electronic devices and high-power transistors. Magnetic silicon single crystal is mainly used for making CCI devices. 90% of the production is made of Czochralski silicon single crystals, which are used to make integrated circuits and other discrete components. It can be divided into circuit level silicon single crystal, detector level silicon single crystal, etc. according to its purpose We can supply CZ ,MCZ,FZ monocrystalline silicon ingot .

Silicon oxide wafer is thermal growth a uniform oxide layer on the bare silicon wafer surface .The oxidation process includes high-temperature dry oxidation and high-temperature wet oxidation.

By depositing metal films on the surface of silicon wafers, components such as electrode wires and transistors can be prepared. These metal films have good conductivity and stability, which can ensure the normal operation of the circuit.Commonly the metal film are gold , platinum , aluminum , copper , silver and so on .

Si3N4 film on silicon wafer by LPCVD .

Epitaxy process is actually a thin layer single crystal growth technique, which involves growing a new single crystal layer with a certain conductivity type, resistivity, thickness, and lattice structure consistent with bulk single crystals along the crystal direction on the substrate of silicon single crystals under certain conditions.

It suitable for testing samples with strong absorption peaks in many ranges, and can deduct the influence of background noise. We have some stock of Zero Diffraction Silicon Wafer .Welcome to contact us .

It suitable for testing samples with strong absorption peaks in many ranges, and can deduct the influence of background noise. We have some stock of Zero Diffraction Silicon Wafer .Welcome to contact us .

12 inch dummy applied for testing before actual production. Also applied for testing equipment 。 We have  large stock of 12inch silicon wafer with very cheape price . Weclome send us your inquiry .

Silicon wafer cutting is mainly used in the fields of semiconductors, optoelectronics and solar energy, and is one of the important processes for manufacturing chips and optoelectronic components. In the semiconductor field, silicon wafer cutting is a necessary process for chip manufacturing, while for optoelectronics and solar energy, silicon wafer cutting is a key step in manufacturing optoelectronic chips and solar panels. Through cutting, silicon wafers can be processed into chips and devices of various shapes and sizes, which are widely used in electronic products such as mobile phones, computers, tablets, as well as many fields such as optics, medical care and aviation. At present, the main silicon wafer cutting methods used are as follows: 1. Mechanical cutting: Using a diamond cutting disc to cut silicon wafers can get a very straight cut, but the cutting speed is slow and it is easy to produce fragments. 2. Laser cutting: Using a laser beam to cut silicon wafers is very fast, but it requires expensive equipment and skilled technical operations, and the dust generated will cause harm to the equipment. 3. Ion beam cutting: Using an ion beam to cut silicon wafers is fast, but it requires expensive equipment and processes, and will leave certain residues on the surface of the silicon wafer. 4. Sheet metal cutting: Using a cutting tool to split the silicon wafer, it is suitable for thicker silicon wafers, but the cut is uneven and the cutting speed is slow.