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According to the classification of manufacturing processes, semiconductor silicon wafers can be mainly divided into polished wafers, epitaxial wafers and high-end silicon-based materials represented by SOI silicon wafers. Single crystal silicon ingots are cut, ground and polished to obtain polished...

As a third-generation semiconductor material, silicon carbide has the characteristics of large bandgap width, high breakdown electric field, high saturation electron drift velocity, high thermal conductivity, and high radiation resistance compared to silicon materials. It is suitable for manufacturi...