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Silicon Carbide Substrate Wafer

4inch SiC Wafer

Silicon Carbide Substrate Wafer

Silicon carbide is a third-generation semiconductor material with excellent physical properties such as high energy gap, high thermal conductivity, and high electron saturation drift rate. It has broad application prospects in high-temperature, high-power, high-pressure, high-frequency and other fields, such as electric vehicles, communication, energy, industry, etc.

  • Item No :

    011
  • Order(MOQ) :

    1
  • Payment :

    100%Prepay
  • Product Origin :

    China

Silicon Carbide Substrate Wafer

Polytype 4H -SiC 6H- SiC
Diameter 2 inch | 3 inch | 4 inch | 6inch 2 inch | 3 inch | 4 inch | 6inch
Thickness 330±25μm 330±25μm
Conductivity N – type / Semi-insulating N – type / Semi-insulating
Orientation On axis <0001> On axis <0001>
  Off axis <0001> off 4° Off axis <0001> off 4°
Resistivity 0.015 ~ 0.03 ohm-cm 0.02 ~ 0.1 ohm-cm
  (4H-N) (6H-N)
Micropipe Density(MPD) ≤10/cm2  ~ ≤1/cm2 ≤10/cm2  ~ ≤1/cm2
TTV ≤ 15 μm ≤ 15 μm
Bow / Warp ≤25 μm ≤25 μm
Surface DSP/SSP DSP/SSP
Grade Production / Research grade Production / Research grade
Lattice parameter a=3.076A , c=10.053A a=3.073A , c=15.117A
Eg/eV(Band-gap) 3.27 eV 3.02 eV
ε(Dielectric Constant) 9.6 9.66
Refraction Index n0 =2.719 ne =2.777 n0 =2.707 , ne =2.755
Note:We can provide customized .Welcome to contact us .

 

 

Application:

1,Power electronic devices: Silicon carbide wafers have the ability to withstand high voltage and work at high temperatures, making them widely used in the field of power electronic devices.

2,Optoelectronic devices: Silicon carbide chips can be made into high brightness LEDs (light emitting diodes) for use in fields such as lighting, display, and communication. In addition, silicon carbide wafers can also be used to manufacture solar cells, with high photoelectric conversion efficiency and longer lifespan.

3,Infrared detectors: Silicon carbide wafers have high sensitivity to infrared radiation, making them widely used in the field of red detectors.

4,Automotive Electronics:The high-temperature working ability and high pressure resistance of silicon carbide wafers make them an ideal material in the automotive electronics field.

 

FAQ:

1:What's the minimum order quantity ?

We have stock so please inform the quantity you need and then we will check the quantity of our stock .If we don't have stock will base on our material we have .

2:What's the production time?

If we have stock the lead time around 2-3week .If need make production the lead time need discuss base on your quantity .

3:What is your payment method ?

Usualy by TT if you need other method pls discuss with us .

 

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4inch SiC Wafer
Silicon Carbide Substrate Wafer
Silicon carbide is a third-generation semiconductor material with excellent physical properties such as high energy gap, high thermal conductivity, and high electron saturation drift rate. It has broad application prospects in high-temperature, high-power, high-pressure, high-frequency and other fields, such as electric vehicles, communication, energy, industry, etc.
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