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As a third-generation semiconductor material, silicon carbide has the characteristics of large bandgap width, high breakdown electric field, high saturation electron drift velocity, high thermal conductivity, and high radiation resistance compared to silicon materials. It is suitable for manufacturing high-temperature, high-voltage, and high-frequency products. , high-power devices. Currently, from photovoltaics to new energy vehicles, the downstream market demand for silicon carbide is strong. Especially as the demand for electric vehicles and new energy continues to grow, the demand for SiC materials is showing a blowout growth trend. Domestic silicon carbide is accelerating from industrialization to commercialization. From the perspective of the industrial chain, the SiC industry chain is relatively long, involving a series of links such as substrate, epitaxy, device design, device manufacturing, packaging and testing. Each link requires strong professionalism, and also requires high technology and capital investment.