2-12inch Cz Silicon Substrate

Czochralski monocrystalline silicon wafer Growth method:CZ  The main process is to put polycrystalline silicon into the crucible, heat it to melt it, then clamp a single crystal silicon seed crystal and suspend it above the crucible. When pulling straight, insert one end into the melt until it melts, then slowly rotate and Pull upward. In this way, a single crystal will be formed through gradual condensation at the interface between liquid and solid. Since the entire process can be regarded as a process of replicating the seed crystal, the generated silicon crystal is single crystal silicon. The Czochralski method has a relatively high carbon and oxygen content and many impurities and defects, but the cost is low. Usually Cz silicon wafer dopant phosphorus,Boron,Sb,As .